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Surface contamination metrology

Measure elemental contamination at discrete points or with full wafer maps

  • Ease of operation and rapid analysis results
  • Accepts 200 mm and smaller wafers
  • Low cost of ownership
  • Compact design, footprint
  • Sealed X-ray tube source
  • Wide range of analytical elements (S~U)
  • Application to bare Si and to non-Si substrates
  • Zero edge exclusion (ZEE-TXRF) measurement capability
  • Import measurement coordinates from defect inspection tools for follow-up analysis
TXRF 3800e
Semiconductors, Total reflection XRF (TXRF)
Semiconductor manufacturing
Total reflection X-ray fluorescence (TXRF)

TXRF analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3800e can measure elements from S through U with a single-target, dual-beam X-ray system and a new liquid nitrogen-free detector system.

The TXRF 3800e includes the Rigaku patent pending X-Y-θ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" — out to zero edge exclusion.

All of these features are housed in a new, compact, and efficient design. Access for all maintenance work is through the front and rear panels, so other cleanroom equipment may be placed next to the TXRF 3800e. This represents a large savings in expensive cleanroom space.

Specifications

Product name TXRF 3800e
Technique Total reflection X-ray fluorescence (TXRF)
Benefit Rapid elemental analysis, of S to U, to gauge wafer contamination in all fab processes
Technology Dual-beam TXRF system with liquid nitrogen-free detector
Core attributes Up to 200 mm wafers, XYθ sample stage system, in-vacuum wafer robotic transfer system
Core options SECS/GEM communication software. Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots"
Computer Internal PC, MS Windows® OS
Core dimensions 1000 (W) x 1760 (H) x 948 (D) mm
Mass 100 kg (core unit)
Power requirements 3Ø, 200 VAC 50/60 Hz, 100 A