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Wafer surface contamination metrology by VPD-TXRF

Measurement of ultra-trace elemental surface contamination

  • Accepts 300 mm, 200 mm, and 150 mm wafers
  • Wide range of analytical elements (Na~U)
  • Light-element sensitivity (for Na, Mg, and Al)
  • Single target 3-beam method and XYθ stage are unique to Rigaku, enabling highly accurate ultra trace analysis over the entire wafer surface
  • Integrated, fully-automated VPD preparation for highest sensitivity
  • 1E7 atoms/cm² detection limits
  • Import measurement coordinates from defect inspection tools for follow-up analysis
  • Multitasking: simultaneous VPD and TXRF operation for highest throughput
TXRF-V310
Semiconductors, Total reflection XRF (TXRF)
Semiconductor manufacturing
Total reflection X-ray fluorescence (TXRF)

TXRF analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF-V310 can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.

The TXRF-V310 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

Integrated VPD capability enables automatic VPD preparation of one wafer while a TXRF measurement is made on another wafer for the highest sensitivity and high throughput. VPD-TXRF eliminates the operator variability that may occur with ICP-MS, and VPD-TXRF can be completely controlled via factory automation. VPD recovery from selected areas, including the bevel area, is available.

Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.

Optional ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.

Optional BAC-TXRF capability enables fully-automated front-side and back-side TXRF measurements of 300 mm wafers with non-contacting wafer flipping.

Specifications

Product name TXRF-V310
Technique Total reflection X-ray fluorescence (TXRF) w/ vapor phase decomposition (VPD)
Benefit Measurement of ultra-trace elemental surface contamination; 1E7 atoms/cm² detection limits
Technology Automatic VPD preparation, three-beam excitation and automatic optics alignment
Core attributes Automatic VPD, rotating-anode X-ray source, XYθ sample stage , liquid nitrogen-free detector, accepts 300 mm, 200 mm, and 150 mm wafers
Core options GEM-300 automation software for full factory automation, SP-TXRF capability enables mapping of the entire wafer surface, ZEE-TXRF capability enables measurements to zero edge exclusion, BAC-TXRF capability enables fully-automated front-side and back-side measurements
Computer Internal PC, MS Windows® OS
Core dimensions 1200 (W) x 2050(H) x 2990 (D) mm
Mass 1650 kg (core unit)
Power requirements 3Ø, 200 VAC 50/60 Hz, 125 A